| PART |
Description |
Maker |
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| HE8811 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| HE8811_06 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
HITACHI[Hitachi Semiconductor]
|
| SE1003-C |
GaAlAs on GaAs infrared emitting diode.
|
NEC Electronics
|
| TSHA5200 TSHA520009 TSHA5201 TSHA5202 TSHA5203 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| MIE-324L3 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-334L3 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LTE-2871 |
GaAlAs T-1 3/4 Modified Infrared Emitting Diode
|
LITE-ON ELECTRONICS INC
光宝科技股份有限公司
Lite-On Technology Corporation
|
| MIE-824H2 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-536L3U MIE-526L3U |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LN671 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
